Suppression of the Regrowth Interface Leakage Current in AlGaN/GaN HEMTs by Unactivated Mg Doped GaN Layer作者：刘婷, 渡边浩崇 ,新田州吾,王嘉,于国浩,安藤裕二, 本田善央, 天野浩,田中墩之,小出康夫单位：名古屋大学未来材料系统研究所，名古屋大学电子学系，北京化工大学数理学院
Transverse electric lasing at record short wavelength 244.63 nm from GaN quantum wells with weak exciton localizationAuthor：Maocheng Shan, Yi Zhang, Xiaohang Li, Changqing ChenInstitute：Wuhan National Laboratory for Optoelectronics, King Abdullah University of Science and Technology (KAUST)
