电流/功率截止频率为135/310 GHz的高性能硅基InAlN/GaN HEMTsHigh-Performance InAlN/GaN HEMTs on Silicon Substrate with fT/fmax of 135/310 GHz 崔鹏山东大学新一代半导体材料研究院研究员CUIPengResearch Fellow of the Institute of Novel Semiconductor of Shandong University
面向功率器件的高性能AlN陶瓷基板High Performance AlN Ceramic Substrate for Power Devices梁超江苏博睿光电股份有限公司副总经理LIANG ChaoDeputy General Manager of Jiangsu Bree Optronics Co., Ltd
基于超短周期超晶格AlN/GaN的深紫外短波光发射调控Deep-ultraviolet light extraction towards shorter wavelength based on ultrashort-period AlN/GaN suplerlattices高娜厦门大学副教授GAO NaAssociate Professor of Xiamen University
Fabrication of 265 nm AlGaN-LEDs on Face-to-face annealed AlN/sapphire template三宅秀人日本三重大学教授Hideto MIYAKEProfessor of Graduate School of Engineering, Mie University
利用AlN传导层在GaN衬底上外延生长金刚石薄膜及其热传输特性Thermal dissipation from GaN to diamond with AlN conduction layer桑立雯日本国立物质材料研究所独立研究员SANG LiwenIndependent Scientist of National Institute for Materials Science (NIMS), Japan
平片蓝宝石衬底上高质量AlN材料MOCVD外延生长High quality AlN growth on flat sapphire at relative low temperature by MOCVD赵德刚中国科学院半导体所研究员ZHAO DegangProfesor of Institute of Semiconductors, CAS
