1200V SiC MOSFET抗辐射可靠性研究Investigation of 1200V SiC MOSFET Radiation Ruggedness任娜浙江大学特聘研究员REN NaProfessor of Zhejiang University

教育用封装光源颜色参数漂移及热特性分析研究Analysis and research on color parameter drift and thermal properties of packaged light source applied in education王书昶常熟理工学院副教授WANG ShuchangAssociate Professor of Changshu Institute of Technology

高品质磷化铟衬底对激光器性能影响研究Effect of High Quality InP Substrate on Laser Performance惠峰云南锗业公司首席科学家、云南鑫耀半导体材料有限公司总经理HUI FengChief Scientist of Yunan Germanium Co.,ltd

人工光源光谱连续性研究Study of Spectral Continuity of Artificial Light Sources申崇渝北京易美新创科技有限公司研发总监SHENChongyuDirector of RD ofBeijing ShineOn Innovation Technology Co., Ltd.

光健康与近视防护黄昌兵中国科学院心理研究所研究员HUANGChangbingProfessor of InstituteofPsychology,CAS

照明色彩质量研究进展Recent Research Progress on Colour Quality of Lighting刘强武汉大学教授LIU Qiang Professor of Wuhan university

使用MOCVD生长的QCL激光器Epitaxy of mid- infrared quantum cascade lasers fully by MOCVD房玉龙中电科十三所基础研究部主任FANG YulongHebei Semiconductor Institute

降低单眼亮度增加成人单眼时间同步阈值/使用屏幕设备对7-11岁儿童近视的影响：一项多中心实验研究Reduced Monocular Luminance Increases Monocular Temporal Synchrony Threshold in Human Adults / Influence of Screen Devices using on Myopia in Children aged 7-11 years: a Multi-center Experimental Study余茜温州医科大学附属眼视光医院

氮化镓基激光器和超辐射管研究进展Progress of GaN based laser diodes and superluminescene diodes刘建平中国科学院苏州纳米技术与纳米仿生研究所纳米器件研究部 研究员LIU JianpingProfessor of Nanodevice Research Department of Suzhou Institute of Nanotechnology and Nanobionics, Chinese Academy of Sciences

基于蓝光半导体激光器的新器件：SWOT分析New devices based on blue laser diodes: SWOT analysis.Mike LESZCZYNSKI波兰高压物理研究所研究员Mike LESZCZYNSKIProfessor of Institute of High Pressure Physics, Poland

微米级氧化镓厚膜的载流子定向输运与深紫外光电探测Directional carrier transport in micrometer-thick gallium oxide films for high-performance deep-ultraviolet photodetection张文瑞中科院宁波材料所研究员Zhang WenruiProfessor Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences

AlGaN基深紫外发光器件设计与仿真研究Design and simulation of AlGaN-based Deep Ultraviolet Emitters刘玉怀郑州大学电气与信息工程学院教授、科技部电子材料与系统国家级国际联合研究中心主任、河南省电子材料与系统国际联合实验室主任LIU YuhuaiProfessor and Director of National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials an

氮化物的范德华外延：基底结构、多性能控制和紫外光电器件应用Van der Waals Epitaxy of Nitrides: Substrate Construction, Multi-Properties Control and Ultraviolet Optoelectronic Device Application孙晓娟中科院长春光机所研究员SUN XiaojuanProfessor of Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

高效率深紫外 Micro-LED尺寸依赖特性研究High-efficiency and size-dependent efficiency characteristics of UVC micro-LEDs崔旭高复旦大学信息科学与工程学院光源与照明工程系副教授CUI XugaoAssociate Professor of Fudan University

超宽禁带半导体氧化镓及金刚石的晶体生长模拟研究Modeling of ultrawide Bandgap Semiconductor crystal growth for Gallium oxide and Diamond付昊苏州思体尔软件科技有限公司副总经理Henry FUVice General Manager of SuZhou STR Software Technology Co., Ltd.

金刚石深紫外光电探测器研究Deep ultraviolet photodetectors based on diamond杨珣郑州大学副教授YANG XunProfessor of Zhengzhou University

MgO（100）上生长柱状纳米晶b-Ga2O3外延薄膜及其高灵敏度日盲探测器研究Columnar-nanodomained epitaxial b-Ga2O3 thin films on MgO(100) for solar-blind photodetectors with exceedingly high sensitivity何云斌湖北大学教授HE YunbinProfessor of Hubei University

超宽禁带六方氮化硼二维原子晶体及其光电器件Growth of ultra-wide band-gap two-dimensional hexagonal boron nitride for optoelectronic devices张兴旺中国科学院半导体所研究员ZHANG XingwangProfessor of Institute of Semiconductors, Chinese Academy of Sciences

超高热导率立方砷化硼和氮化硼晶体Cubic boron arsenide and boron nitride crystals with ultrahigh thermal conductivity 宋柏北京大学工学院特聘研究员SONG BaiProfessor of Peking University

利用泵浦-探测瞬态反射显微技术测定立方砷化硼的高双极性迁移率High Ambipolar Mobility in Cubic Boron Arsenide（BAs）Revealed by Transient Reflectivity Microscopy刘新风国家纳米科学中心研究员,中科院纳米标准与检测重点实验室副主任LIU XinfengProfessor of National Nanoscience Center, Deputy director of the Key Laboratory of Standardizaiton and Characteriaziton of the Chinese Academy of Sciences