高功率宽禁带半导体射频器件研究进展Research Progress of High Power Wide Band-gap Semiconductor RF Devices张进成西安电子科技大学副校长、教授ZHANG JinchengVice PresidentProfessor of Xidian University

用于病毒灭活的蓝宝石生长230nm远紫外光功率模组的开发研究Development of 230 nm Far-UVC LED Power Module Grown on c-Sapphire for Human Harmless Virus Inactivation平山秀樹日本理化研究所平山量子光素子研究室主任Hideki HIRAYAMAProfessor ofRIkagaku KENkyusho Institute of Physical and Chemical Research(RIKEN),Japan

基于纳米压印全生态产业平台的微纳光学器件制造Manufacturing of Micro and Nano Optical Devices Based on Nanoimprint Eco-industrial Platform罗刚材料科学姑苏实验室研究员、苏州新维度微纳科技有限公司创始人LUO GangProfessor of Gusu Lab, Founderof NDnano

碳化硅单晶缺陷研究及产业化进展Research and Industrialization Progress of SiC Single Crystal Defects陈秀芳山东大学教授、南砂晶圆董事CHEN XiufangProfessor of Shandong University, Board Director of Guangzhou Summit Crystal Semiconductor Co.,Ltd

红到红外波段的三种光疗在减少由受损线粒体诱导的氧化应激方面的效果研究Efficacy of Three red-NIR Wavelengths in Reducing Oxidative Stress Induced by Impaired Mitochondrial Functions董建飞苏州大学教授DONG JianfeiProfessor of Suzhou University

Micro-led研究进展及在光医疗领域的应用展望The Research Progress of Micro-led and its Application Prospect in the Field of Optical Medicine吕金光中国科学院长春光学精密机械与物理研究所研究员LV JinguangProfessorof Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

光学技术糖足微循环监测与干预应用研究Application of Optical Technology in Monitoring and Intervention of Glucose Microcirculation崔锦江中国科学院苏州生物医学工程技术研究所康复与治疗研究室主任、研究员CUI JinjiangDirector and Professor Rehabilitation and Treatment Laboratory, Suzhou Institute of Biomedical Engineering and Technology, Chinese Academy of Sciences

AlN基高压高频功率器件研究进展及挑战Research Progress and Application Prospect ofAlNSingle Crystal Materials周弘西安电子科技大学教授ZHOUHongProfessor at Xidian University

GaN基光电材料外延与MOCVD反应腔结构关联性研究Research on the Correlation Between GaN-based Optoelectronic Material Epitaxy and MOCVD Reactor Chamber Structure姚威振中国科学院半导体研究所副研究员、中科重仪半导体联合创始人YAO WeizhenAssociate Professor of Institute of Semiconductors, Chinese Academy of Sciences, Co-founder of CASInstruments Semiconductor Co., Ltd.

硅衬底GaN基光电材料外延生长Epitaxial Growth of GaN Based Photoelectric Materials on Silicon Substrate孙钱中国科学院苏州纳米技术与纳米仿生研究所研究员SUN QianProfessorof Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences

6英寸复合衬底上厚GaN外延生长研究Growth of Thick GaN Epilayers on 150mm Engineered Substrate韩颖中国电子科技集团第十三所高级工程师HAN YingSenior Engineer of Hebei Semiconductor Research Institute

氮化铝基半导体材料及器件的最新进展Recent Progress on AlN-based Semiconductor Materials and Devices谷保芳孝日本NTT基础研究实验室负责人、资深杰出研究员Taniyasu YOSHITAKAGroup leader and Senior Distinguished Researcher of NTT Basic Research Laboratories, NTT Corporation

氨热法氮化镓单晶生长研究进展及面临的挑战Progress and Challenges in Bulk GaN Crystal Growth by Ammonothermal Method任国强中国科学院苏州纳米技术与纳米仿生研究所、研究员REN GuoqiangProfessorof Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences

氮化铝单晶材料研究进展与应用展望Research Progress and Application Prospect of AlN Single Crystal Materials程红娟中国电子科技集团第四十六所新材料研发中心副主任CHENG HongjuanDeputy Director of New Materials Research and Development Center of CETC 46THInstitute

轨道交通SiC功率器件研究与应用进展刘国友株洲中车时代电气股份有限公司中车科学家、功率半导体与集成技术全国重点实验室副主任

第四代半导体材料平坦化研究进展Research Progress on Planarization of Fourth Generation Semiconductor Materials赵志强北京艾姆希半导体科技有限公司销售总监ZHAO ZhiqiangSales Director of MCF Technologies Ltd.

超宽禁带半导体氧化镓和氮化铝特性研究Research on the Characteristics of Ultra-wide Bandgap Semiconductor GaO and AlN张道华深圳平湖实验室第四代半导体首席科学家、新加坡工程院院士ZHANG DaohuaChief Scientist of Fourth-generation Semiconductors of Shenzhen Pinghu Laboratory, Academician the Academy of Engineering, Singapore

基于液态金属打印和飞秒激光照射的高性能原子薄Ga2O3气体传感器High-Performance atomically thin Ga2O3Gas Sensors via Liquid Metal Printing and Femtosecond Laser Irradiation徐承龙皇家墨尔本大学微纳研究院研究员XU ChenglongProfessor of Micro Nano Research Facility, STEM College, RMIT University

氧化镓PECVD外延生长及光电信息感知器件研究Research on PECVD Epitaxial Growth of Gallium Oxide and the Photoelectric Information Sensing Devices李山南京邮电大学副教授、苏州镓和半导体研发总监LI ShanAssociate Professor, Nanjing University of Posts and Telecommunications, RD director of Suzhou GAO Semiconductor Co. Ltd.

双阈值耦合AlGaN/GaN HEMT中用于优化Ka波段高电场线性度的多指漏极板研究Investigation of multi-fingers drain field plate in dual-threshold coupling AlGaN/GaN HEMTs for optimizing linearity at high electrical field in Ka-bands王鹏飞西安电子科技大学Wang PengfeiXidian University