国产突破，中国射频前端产业引领5G 芯时代Domestic breakthrough, China's RF front-end industry leads the 5G Chip era黄鑫北京昂瑞微电子技术股份有限公司副总经理HUANG XinVice General Manager of Beijing OnMicro Electronics Co., Ltd.

47GHz-52GHz功率放大器芯片套片设计Design of 47GHz-52GHz Power Amplifier Chipset 杜鹏搏中国电科十三所正高级工程师、河北新华北集成电路有限公司副总经理DUPengboSenior Engineer of Hebei Semiconductor Institute, Deputy General Manager of Hebei New North China Integrated Circuit Co., Ltd

AlGaN/GaN HEMT能带工程和界面调制AlGaN/GaN HEMT energy band engineering and interface modulation胡卫国中国科学院北京纳米能源与系统研究所研究员HU WeiguoProfessor of Beijing Institute of Nanoenergy and Systems, Chinese Academy of Sciences

Condura.ultraTM无银AMB氮化硅基板---车规级功率模块用高性价比解决方案Condura.ultraTM silver free AMB --- cost-effective solution for automotive power module张靖贺利氏电子中国区研发总监ZHANG JingDirector of Innovation China, Heraeus Electronics

光健康与近视防护黄昌兵中国科学院心理研究所研究员HUANGChangbingProfessor of InstituteofPsychology,CAS

氮化镓基激光器和超辐射管研究进展Progress of GaN based laser diodes and superluminescene diodes刘建平中国科学院苏州纳米技术与纳米仿生研究所纳米器件研究部 研究员LIU JianpingProfessor of Nanodevice Research Department of Suzhou Institute of Nanotechnology and Nanobionics, Chinese Academy of Sciences

室温紫外GaN微盘激光器Room-Temperature Ultraviolet GaN Microdisk Lasers司志伟中国科学院苏州纳米技术与纳米仿生研究所SI ZhiweiSuzhou Institute of Nano-tech and Nano-bionics, CAS

基于表面电位的-Ga2O3功率MOSFET紧凑模型A Surface Potential Based Compact Model for -Ga2O3 Power MOSFETs周凯中国科学技术大学ZHOU KaiChina University of Science and Technology

金刚石微波功率器件进展Progress in Diamond Microwave Power Devices冯志红中国电科首席科学家、中国电科13所研究员、专用集成电路国家级重点实验室常务副主任FENG ZhihongHebei Semiconductor Research lnstitute

超宽禁带六方氮化硼二维原子晶体及其光电器件Growth of ultra-wide band-gap two-dimensional hexagonal boron nitride for optoelectronic devices张兴旺中国科学院半导体所研究员ZHANG XingwangProfessor of Institute of Semiconductors, Chinese Academy of Sciences

耐高温无机胶及白光/深紫外LED封装研究Enhanced heat dissipation of high-power WLEDs through creation of 3D dams on ceramic substrate with geopolymer/graphene paste孙庆磊中国地质大学（武汉）先进制造中心副教授SUN QingleiAssociate Professor of Advanced Manufacturing Center of China University of Geosciences (Wuhan)

Wide-Field-of-View Optical Detectors for High-Speed Optical Wireless CommunicationBoon S. OOI阿卜杜拉国王科技大学教授（中国科学技术大学特聘研究员孙海定代讲）Boon S. OOIProfessor of King Abdullah University of ScienceTechnology, Saudi Arabia

SiC功率MOSFET技术及应用进展柏松中国电子科技集团首席专家、宽禁带半导体电力电子器件国家重点实验室主任BAI SongChief Scientist of China Electronics Technology Group Corporation, Director of National Key Laboratory of Wide Bandgap Semiconductor Power Electronic Devices

蓝光照射对四种不同人体细胞活性的影响研究Impact of blue light irradiation on the viability of four types of human cells董建飞中国科学院苏州生物医学工程技术研究所研究员DONG JianfeiProfessor of Suzhou Institute of Biomedical Engineering and Technology, CAS

以优化室内CCT改为以提升视觉舒适度Optimized Combination of Screen Brightness and Ambient Illuminances for Visual Comfort / Matching an Ambient Light CCT with Proper Screen CCT to Optimize Indoor CCT蔡建奇中国标准化研究院视觉健康与安全防护实验室主任、研究员CAI JianqiDirectorProfessor of Visual Health and Safety Protection Laboratory, China National Institute of Standardization

平片蓝宝石衬底上高质量AlN材料MOCVD外延生长High quality AlN growth on flat sapphire at relative low temperature by MOCVD赵德刚中国科学院半导体所研究员ZHAO DegangProfesor of Institute of Semiconductors, CAS

照强度与白色LED色温对丹参种苗生长的影响Effects of lighting intensity and color temperature of white LED on growth of Salvia miltiorrhiza transplants贺冬仙中国农业大学水利与土木工程学院教授HE DongxianProfessor of College of Water Resources and Civil Engineering, China Agricultural University

《无人植物工厂作物育种加速器》Unmanned plant factory crop breeding accelerator王森中国农业科学院都市农业研究所副研究员 、骨干专家WANG SenProfessor of Institute of Urban Agriculture, CAAS

当前，人们对于绿色、环保、安全的重视度在不断的提高，随着全球化加速发展，公共卫生风险对人口流动和经济活动造成前所未有的限制，防范和化解重大疫情和突发公共卫生风险的重要性不言而喻。基于第三代半导体氮化镓材料的紫外LED光源具有节能环保、寿命长、开启速度快、辐射强度可控、光谱可定制等优势，成为维护公共卫生安全的重要力量。紫外LED是半导体光电产业发展的新蓝海，双碳战略也给包括紫外LED产业在内的绿色环保节能产

宽禁带材料具有非中心对称的晶体结构，因而表现出显著的压电特性，长期以来这些材料中压电极化电荷和半导体特性的耦合过程被忽略。近年来对于压电电子学和压电光电子学的基础及应用研究取得了快速地发展。多种功能材料中的压电电子学和压电光电子学的基本效应得到了系统深入地研究，相关的理论体系得以建立，诸多压电电子学和压电光电子学器件也被设计研发。会上，王中林院士带来了压电学理论与研究成果的分享，报告结合具体的数据