太阳能卫星及相关波束无线电力传输技术的最新研发进展Recent RD of Solar Power Satellite and Related Beam Wireless Power Transfer TechnologyNaoki SHINOHARA日本京都大学教授NaokiSHINOHARAProfessor of Kyoto University,Japan
28GHz氮化镓基时间调制波束成形系统28GHz GaN based time modulated beamforming system黄同德南京理工大学副教授HUANG TongdeAssociate Professor of Nanjing University of Science and Technology
Scalable nonlinear RF modeling of GaN HEMTs with industry standard ASM-HEMT compact modelSourabh KHANDELWAL澳大利亚麦考瑞大学教授Sourabh KHANDELWALProfessor of Macquarie University, Australia
中高压（1-10 kV）氮化镓功率器件新进展New Progress in Medium and High Voltage (1-10 kV) GaN Power Devices张宇昊美国弗吉尼亚理工大学助理教授ZHANG Yuhao Assistant Professor, Virginia Tech University
Si基GaN器件及系统研究与产业前景Research of GaN-on-Si devices and the related systems于洪宇南方科技大学深港微电子学院院长、教授YU HongyuDeanProfessor of School of Microelectronics at Southern University of Science and Technology
New technologies for efficient and integrated GaN power devicesElison MATIOLI瑞士洛桑联邦理工学院教授Elison MATIOLIProfessor of ?cole Polytechnique Fdrale de Lausanne, Swiss
SiC等离子体波脉冲功率器件与应用研究Research on 4H-SiC Plasma Wave Pulsed Power Devices and its Applications孙乐嘉西安电子科技大学副教授SUN LejiaAssociate Professor of Xidian University
电热应力下碳化硅功率MOSFET损伤的多尺度探测表征方法Multi-scale Detection and Characterization of SiC Power MOSFET Damage under Electro-thermal Stress刘斯扬东南大学教授LIU SiyangProfessor of Southeast University
Physical Modeling of Charge Trapping Effects in SiC MOSFETsTibor GRASSER奥地利维也纳工业大学微电子研究所所长、教授Tibor GRASSERProfessor and Head of the Institute for Microelectronics at Technische Universit?t Wien, Austria
GaN半导体垂直腔面激光器的仿真设计与分析Simulation Design and Analysis of GaN Semiconductor Vertical Cavity Surface Laser张紫辉河北工业大学教授ZHANG ZihuiProfessor of Hebei University of Technology
Ultrawide Bandgap Ga2O3 Technologies - Benefits of Heterogeneous IntegrationMartin KUBALL英国布里斯托大学新兴技术系主任、教授Martin KUBALLRoyal Academy of Engineering Chair in Emerging Technologies at the University of Bristol, UK
横向和纵向-Ga2O3功率MOSFET的十年进展A Decade of Advances in Lateral and Vertical -Ga2O3 Power MOSFETs黄文海香港科技大学副教授Man Hoi WONGAssociate Professor of The Hong Kong University of Science and Technology
利用高Al组分-(AlGa)2O3缓冲层在蓝宝石衬底上优化生长高质量-Ga2O3厚膜Growth of high quality - Ga2O3 thick film on sapphire by using high Al content - (AlGa)2O3 buffer layer张赫之大连理工大学副教授ZHANG HezhiAssociate professor of Dalian University of Technology
MPCVD法金刚石同质外延生长及MOS器件技术Homogeneous epitaxial diamond growth by MPCVD and its MOS device technology张金风西安电子科技大学教授ZHANG JinfengProfessor of Xidian University
