SiC MOSFET热阻精确测量技术研究Research on the technique of accurately measuring thermal resistance of SiC MOSFET刘奥中国电子科技集团公司第五十五研究所LIU AONanjing Electronics Research Institute
4H-SiC MOSFET中界面碳团簇的形成和迁移率退化机理Interfacial Carbon Cluster Formation and Mobility Degradation in 4H-SiC MOSFETs张召富武汉大学工业科学研究院研究员ZHANG ZhaofuProfessor of The Institute of Technological Sciences, Wuhan University
GaN HEMT与SIC MOSFET在户用储能PCS方向应用优势Advantages in household energy storage PCS using GaN HEMT and SiC MOSFET https://fanyi.baidu.com/?aldtype=85孔令涛--南京芯干线科技有限公司市场总监
电热应力下碳化硅功率MOSFET损伤的多尺度探测表征方法Multi-scale Detection and Characterization of SiC Power MOSFET Damage under Electro-thermal Stress刘斯扬东南大学教授LIU SiyangProfessor of Southeast University
Physical Modeling of Charge Trapping Effects in SiC MOSFETsTibor GRASSER奥地利维也纳工业大学微电子研究所所长、教授Tibor GRASSERProfessor and Head of the Institute for Microelectronics at Technische Universit?t Wien, Austria
横向和纵向-Ga2O3功率MOSFET的十年进展A Decade of Advances in Lateral and Vertical -Ga2O3 Power MOSFETs黄文海香港科技大学副教授Man Hoi WONGAssociate Professor of The Hong Kong University of Science and Technology
SiC功率MOSFET技术及应用进展柏松中国电子科技集团首席专家、宽禁带半导体电力电子器件国家重点实验室主任BAI SongChief Scientist of China Electronics Technology Group Corporation, Director of National Key Laboratory of Wide Bandgap Semiconductor Power Electronic Devices
SiC 功率MOSFET器件的可靠性研究Development trends and challenges of SiC Power MOSFET device 张艺蒙西安电子科技大学微电子学院教授Yimeng Zhang Professor of School of Microelectronics, Xidian University
