Suppression of the Regrowth Interface Leakage Current in AlGaN/GaN HEMTs by Unactivated Mg Doped GaN Layer作者：刘婷, 渡边浩崇 ,新田州吾,王嘉,于国浩,安藤裕二, 本田善央, 天野浩,田中墩之,小出康夫单位：名古屋大学未来材料系统研究所，名古屋大学电子学系，北京化工大学数理学院
Transverse electric lasing at record short wavelength 244.63 nm from GaN quantum wells with weak exciton localizationAuthor：Maocheng Shan, Yi Zhang, Xiaohang Li, Changqing ChenInstitute：Wuhan National Laboratory for Optoelectronics, King Abdullah University of Science and Technology (KAUST)
北京大学陈志忠教授在《Operation behavior under extremely high injection level for GaN-based micron LED》报告中指出，我们制作不同直径微柱LEDs不同波长和不同的基质。测量了电致发光(EL)谱和电流-电压(I-V)曲线。高饱和电流密度达到300 kA / cm2 20m紫外线导致氮化镓衬底。效率为LEDs下垂也大大提高。采用横光软件模拟高注入水平下的输运和重组过程。综合量子漂移-扩散模型考虑了多体效应。并介绍了超高注入机理。
