基于HfZrO2与b-Ga2O3异质结的高性能自驱动日盲紫外光探测器P-Type SnO2 Fabrication and Construction of SnO2 Homojunction UV Photodetector黎明锴湖北大学材料科学与工程学院教授LIMingkaiProfessor of Hubei University
Ga2O3/GaN异质结构紫外光电探测器Ga2O3/GaN Heterostructure Ultraviolet Photodetectors黄凯厦门大学物理科学与技术学院副院长、教授HUANG KaiProfessor, School of Physical Science and Technology, Xiamen University
Ultrawide Bandgap Ga2O3 Technologies - Benefits of Heterogeneous IntegrationMartin KUBALL英国布里斯托大学新兴技术系主任、教授Martin KUBALLRoyal Academy of Engineering Chair in Emerging Technologies at the University of Bristol, UK
横向和纵向-Ga2O3功率MOSFET的十年进展A Decade of Advances in Lateral and Vertical -Ga2O3 Power MOSFETs黄文海香港科技大学副教授Man Hoi WONGAssociate Professor of The Hong Kong University of Science and Technology
利用高Al组分-(AlGa)2O3缓冲层在蓝宝石衬底上优化生长高质量-Ga2O3厚膜Growth of high quality - Ga2O3 thick film on sapphire by using high Al content - (AlGa)2O3 buffer layer张赫之大连理工大学副教授ZHANG HezhiAssociate professor of Dalian University of Technology
NiO/Ga2O3异质结二极管中深能级陷阱和载流子输运机制Correlation of deep-level traps and carrier transport mechanisms in NiO/Ga2O3 heterojunction diodes汪正鹏南京大学Zhengpeng WangNanjing University
MgO(100)上生长柱状纳米晶b-Ga2O3外延薄膜及其高灵敏度日盲探测器研究Columnar-nanodomained epitaxial b-Ga2O3 thin films on MgO(100) for solar-blind photodetectors with exceedingly high sensitivity何云斌湖北大学教授HE YunbinProfessor of Hubei University
新型宽禁带压电半导体材料-Ga2O3及其在射频谐振器中的应用-Ga2O3: an Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators王钢中山大学佛山研究院院长,中山大学半导体照明材料及器件国家地方联合工程实验室主任、教授WANG GangProfessor and Dean of Foshan Institute of Sun Yat-Sen University; Director of the National-Local Joint Engineering Laboratory of Semiconductor