基于InGaN基硅衬底Micro-LED的多色集成转移印刷技术Transfer printing technology based on InGaN-based silicon substrate micro-LEDs for multicolor integration田朋飞复旦大学副教授TIAN Pengfei Associate Professor of Fudan University
蓝宝石衬底InGaN基红色LED及MicroLEDInGaN based red LEDs and MicroLEDs on sapphire substrate王新强北京大学教授、北大东莞光电研究院院长WANG XinqiangDean of Dongguan Institute of Opto-electronics, Peking University
高质量磷化铟和锑化镓衬底制备技术进展及批量生产Progress in Preparation Technology and Batch Production of High Quality InP and GaSb Substrates赵有文珠海鼎泰芯源晶体有限公司董事长ZHAO YouwenChairman of Zhuhai DT Wafer-Tech Co.,lTD
高品质磷化铟衬底对激光器性能影响研究Effect of High Quality InP Substrate on Laser Performance惠峰云南锗业公司首席科学家、云南鑫耀半导体材料有限公司总经理HUI FengChief Scientist of Yunan Germanium Co.,ltd
利用高Al组分-(AlGa)2O3缓冲层在蓝宝石衬底上优化生长高质量-Ga2O3厚膜Growth of high quality - Ga2O3 thick film on sapphire by using high Al content - (AlGa)2O3 buffer layer张赫之大连理工大学副教授ZHANG HezhiAssociate professor of Dalian University of Technology
用于Micro LED芯片规模量产化的化学剥离生长衬底技术Chemical Peel Growth Substrate Technology for Mass Production of Micro LED Chips郝茂盛上海芯元基半导体科技有限公司总经理HAO MaoshengGeneral Manager of Shanghai Chipfoundation Semiconductor Technology Co., Ltd.
利用AlN传导层在GaN衬底上外延生长金刚石薄膜及其热传输特性Thermal dissipation from GaN to diamond with AlN conduction layer桑立雯日本国立物质材料研究所独立研究员SANG LiwenIndependent Scientist of National Institute for Materials Science (NIMS), Japan
平片蓝宝石衬底上高质量AlN材料MOCVD外延生长High quality AlN growth on flat sapphire at relative low temperature by MOCVD赵德刚中国科学院半导体所研究员ZHAO DegangProfesor of Institute of Semiconductors, CAS
应用于垂直器件的高电导率GaN单晶衬底制HVPE Growth of Bulk GaN with High Conductivity for Vertical Devices王建峰苏州纳维科技有限公司总经理WANG JianfengGeneral Manager of Suzhou Nanowin Science and Technology Co., Ltd
