AlGaN基深紫外发光器件设计与仿真研究Design and simulation of AlGaN-based Deep Ultraviolet Emitters刘玉怀郑州大学电气与信息工程学院教授、科技部电子材料与系统国家级国际联合研究中心主任、河南省电子材料与系统国际联合实验室主任LIU YuhuaiProfessor and Director of National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials an

郑州大学Muhammad Nawaz SHARIF介绍了采用n-AlxGa1-xN低波导层连续分级生长的深紫外纳米线激光二极管光学约束优化的研究成果。研

蓝宝石基B0.375GaN/B0.45GaN量子阱结构的激光二极管中n-p电极对于p型电导率的影响 The effect of n-p electrodes upon the p-type conductivity of B0.375GaN/B0.45GaN QW/QB edge emitting laser diode grown over sapphire substrateMussaab I. NIASS郑州大学 Mussaab I. NIASSZhengzhou University