基于InGaN基硅衬底Micro-LED的多色集成转移印刷技术Transfer printing technology based on InGaN-based silicon substrate micro-LEDs for multicolor integration田朋飞复旦大学副教授TIAN Pengfei Associate Professor of Fudan University
蓝宝石衬底InGaN基红色LED及MicroLEDInGaN based red LEDs and MicroLEDs on sapphire substrate王新强北京大学教授、北大东莞光电研究院院长WANG XinqiangDean of Dongguan Institute of Opto-electronics, Peking University
用于Micro LED芯片规模量产化的化学剥离生长衬底技术Chemical Peel Growth Substrate Technology for Mass Production of Micro LED Chips郝茂盛上海芯元基半导体科技有限公司总经理HAO MaoshengGeneral Manager of Shanghai Chipfoundation Semiconductor Technology Co., Ltd.
碳化硅生长和衬底建模以及基于MOVPE技术的氮化镓生长模拟 Modeling of SiC crystal growth and epitaxy and simulation of GaN metal Organic Vapor DepositionAndrey SMIRNOV俄罗斯STR Group, Inc.资深研发工程师 Andrey SMIRNOVSenior Research Engineer of STR Group, Inc., Russia
同步辐射X射线衍射法实现氮化镓衬底及同质外延薄膜晶格面倾斜可视化 Synchrotron x-ray diffraction-based visualization of lattice-plane tilting of a GaN substrate and epitaxial film坂田修身日本国立材料研究所SPring-8 BL15XU线站站长，东京工业大学兼职教授 Osami SAKATAStation Director of the Synchrotron X-ray Station at SPring-8 and the Group Leaders of the Synchrotron X-ray group and the Synchrotron X-ray
