高功率宽禁带半导体射频器件研究进展Research Progress of High Power Wide Band-gap Semiconductor RF Devices张进成西安电子科技大学副校长、教授ZHANG JinchengVice PresidentProfessor of Xidian University

融通半导体产业链 构建应用创新生态圈Integrate Semiconductor Industry Chain to Build Application Innovation Ecosystem李虹华润微电子有限公司总裁LI HongPresident of China Resources Microelectronics Limited

最新高性能SiC MOSFET技术助力未来SiC市场的发展趋势The Latest High Performance SiC MOSFET Technology Trend for Future SiC Market Development濱田公守日本华为股份有限公司高级首席专家Kimimori HAMADASenior Chief Expert Huawei Technologies Japan

基于大失配外延的氮化物第三代半导体材料与器件Nitride Semiconductor Materials and Devices Based on Large Mismatch Epitaxy沈波北京大学理学部副主任、特聘教授SHEN Bo Deputy Deanand Distinguished Professorof Facultyof Science, Peking University

加快碳化硅芯片和电力电子器件的商业化发展Accelerating Commercialization of SiC Chips and Power ElectronicsVictor VELIADIS美国PowerAmerica执行董事兼CTO、ICSCRM 2024 大会主席、北卡罗莱纳州立大学教授、IEEE宽禁带功率半导体技术路线图委员会(ITRW)主席Victor VELIADISExecutiveDirector and CTO of PowerAmerica, Chair of ICSCRM 2024, Professor of North Carolina State Universityand Chair of ITRW ( IEEE Wide Ban

2024中国第三代半导体技术十大进展/ 2024 China's Top 10 Advances in Wide Band-gap Semiconductor Technology

半导体材料产业的现状和挑战Status and Challenge of Semiconductor Material Industry杨德仁中国科学院院士、浙大宁波理工学院校长、浙江大学硅及先进半导体材料全国重点实验室主任、教授YANG DerenAcademician of Chinese Academy of Sciences,President of NingboTech University, Professor and Director of State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University

面向SiC功率器件的装备与工艺解决方案NAURA Solutions for SiC Power Devices张轶铭北京北方华创微电子装备有限公司Zhang YimingBeijing NAURA Microelectronics Equipment Co.,Ltd

大直径碳化硅外延市场发展与挑战Development and Challenges of Large Diameter Silicon Carbide Epitaxial张国良河北普兴电子科技股份有限公司市场总监ZHANG GuoliangMarketing Director of Hebei Pushing Electronic Technology Co., LTD

碳化硅单晶缺陷研究及产业化进展Research and Industrialization Progress of SiC Single Crystal Defects陈秀芳山东大学教授、南砂晶圆董事CHEN XiufangProfessor of Shandong University, Board Director of Guangzhou Summit Crystal Semiconductor Co.,Ltd

提拉式物理气相传输法制备碳化硅单晶Single-crystal 4H Silicon Carbide Grown with the Method of Pulling Physical Vapor Transport皮孝东浙江大学教授PI XiaodongProfessor of Zhejiang University

化合物半导体外延大规模量产解决方案High Volume Manufacturing of Compound Semiconductors Epitaxy方子文AIXTRON中国总经理FANG ZiwenGM of AIXTRON China

SiC单晶的坩埚结构及PVT生长工艺条件的改进SiC Single Crystals with Modification of Crucible Structure and Process Condition for PVT GrowthWon-Jae LEE韩国东义大学教授、釜山电力半导体研究所所长Won-JaeLEEProfessor of Dong-Eui University,Director of Busan Power Semiconductor Lab.

硅晶圆厂中的SiC制造SiC Fabrication in a Silicon FabVictor VELIADIS美国电力执行董事 CTO、ICSCRM2024大会主席、北卡罗来纳州立大学教授、IEEE宽禁带功率半导体技术路线图委员会(ITRW)主席Victor VELIADISExecutive Director and CTO of PowerAmerica, Chair of ICSCRM 2024, Professor of North Carolina State University and Chair of ITRW

AlN基高压高频功率器件研究进展及挑战Research Progress and Application Prospect ofAlNSingle Crystal Materials周弘西安电子科技大学教授ZHOUHongProfessor at Xidian University

GaN基光电材料外延与MOCVD反应腔结构关联性研究Research on the Correlation Between GaN-based Optoelectronic Material Epitaxy and MOCVD Reactor Chamber Structure姚威振中国科学院半导体研究所副研究员、中科重仪半导体联合创始人YAO WeizhenAssociate Professor of Institute of Semiconductors, Chinese Academy of Sciences, Co-founder of CASInstruments Semiconductor Co., Ltd.

硅衬底GaN基光电材料外延生长Epitaxial Growth of GaN Based Photoelectric Materials on Silicon Substrate孙钱中国科学院苏州纳米技术与纳米仿生研究所研究员SUN QianProfessorof Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences

等离子体辅助分子束外延生长AlN薄膜AlN epilayers grown by plasma assisted molecular beam epitaxy刘欢南京大学LIU HuanNanjing University

用于氮化镓异质外延的高温PVD氮化铝缓冲层技术High Temperature PVD AlN e Buffer Layer Technology for GaN Heteroepitaxy

6英寸复合衬底上厚GaN外延生长研究Growth of Thick GaN Epilayers on 150mm Engineered Substrate韩颖中国电子科技集团第十三所高级工程师HAN YingSenior Engineer of Hebei Semiconductor Research Institute