In pursuit of short wavelength solid state light emitter天野浩日本名古屋大学未来材料与系统研究所教授、日本工程院院士、美国工程院院士、中国工程院外籍院士、２０１４年诺贝尔物理奖获得者Hiroshi AMANOProfessor of Nagoya University, Japan, Member of The Engineering Academy of Japan, Member of the National, Academy of Engineering, Academician of Chinese Academy of Engineering, Laureate of the Nobel Prize

基于氮化镓的CRM图腾柱PFC整流器的无传感器电流过零检测技术王浩宇上海科技大学信息学院长聘副教授、研究员WANG HaoyuAssociate Professor of ShanghaiTech University

GaN/SiC功率器件在航天电源的应用前景Application prospect of GaN/SiC power devices in aerospace power supply万成安北京卫星制造厂有限公司领域总师WAN Chengan Field Chief Engineer of Beijing Satellite Manufacturing Factory Co., Ltd

SiC功率器件在光伏逆变器中的应用进展Application progress of SiC power devices in photovoltaic inverters刘保颂锦浪科技技术研究中心总监LIU Baosong Technical director of Ginlong Technologies co.,ltd

基于宽禁带器件的高频大功率模组应用Application of high frequency and high power module based on wide band gap device刘正阳上海沛塬电子有限公司市场产品总监Zhengyang LIUShanghai MetaPWR Electronics Co., LTD

用于先进SiC功率模块的整体解决（核心设备/材料/工程）方案Overall solution (core equipment/materials/engineering) for advanced SiC power module周鑫苏州博湃半导体技术有限公司市场销售总监ZHOU XinDirector of Sales Marketing, Suzhou Bopai Semiconductor Technology Co., Ltd.

碳化硅及氮化镓功率器件在数据中心AC-DC电源上的应用及展望The application and prospect of wide band gap devices in AC-DC power supply in data center董慨台达电子高阶客制电源事业部中国区总监Dong KaiRD Director of CDBU, Delta Electronics

第三代半导体助力数字能源产业发展The wide bandgap semiconductor boosts the development of digital energy industry于坤山北京世纪金光半导体有限公司副总裁YU KunshanVice President of CENGOL

用于高效能量转换应用的GaN HEMT的深能级效应和可靠性Deep level effects and reliability of GaN HEMTs for high efficiency energy conversion applicationsEnrico Zanoni意大利帕多瓦大学信息工程系教授Enrico ZanoniProfessor of Dipartimento di Ingegneria dellInformazioneUniversit di Padova

高性能GaN-on-GaN材料与器件的外延生长High output power and bandwidth of c-plane GaN-on-GaN micro-LED for high-speed visible light communication王国斌江苏第三代半导体研究院研发部负责人WANG GuobinSenior Project ManagerHead of RD Dept of Jiangsu Institute of Advanced Semiconductors

定量阴极发光CL技术在氮化物半导体中的应用Application of Quantitative Cathodoluminescence Technology in Nitride Semiconductors刘兵武北京正通远恒科技有限公司总经理Stephen LiUGeneral Manager of Beijing HONOPROF Sci.Tech. Ltd

无损表征氮化镓外延热物性的瞬态热反射技术Transient thermoreflectance technique for non-invasively characterizing the thermal properties of GaN epitaxial wafer袁超武汉大学工业科学研究院研究员YUAN ChaoProfessor of The Institute of Technological Sciences, Wuhan University

AlGaN基低维量子结构外延和电导率调控研究Study on the epitaxy and conductivity regulation of AlGaN based low dimensional quantum structures许福军北京大学物理学院副教授Xu Fujun - Associate Professor, Peking University

新型MO源及在第三代半导体中的应用Novel MO Sources and Their Applications in Wide Bandgap Semiconductors杨敏江苏南大光电材料股份有限公司首席科学家

PVT法同质外延AlN生长和p型掺杂面临的挑战Challenges on homoepitaxial AlN growth and p-type doping by the PVT method王琦琨奥趋光电技术（杭州）有限公司研发总监（CTO）

利用AlN传导层在GaN衬底上外延生长金刚石薄膜及其热传输特性Thermal dissipation from GaN to diamond with AlN conduction layer桑立雯日本国立物质材料研究所独立研究员SANG LiwenIndependent Scientist of National Institute for Materials Science (NIMS), Japan

半导体行业对高纯电子化学品质量管理的高要求High requirements for the quality management of high-purity electronic chemicals in Semiconductor俞冬雷安徽亚格盛电子新材料有限公司副总经理YU DongleiVice General Manager of Anhui Argosun?New Electronic Materials Co., Ltd

平片蓝宝石衬底上高质量AlN材料MOCVD外延生长High quality AlN growth on flat sapphire at relative low temperature by MOCVD赵德刚中国科学院半导体所研究员ZHAO DegangProfesor of Institute of Semiconductors, CAS

基于HVPE-Ga2O3氮化的GaN衬底技术The preparation of GaN based on the nitridation of HVPE-Ga2O3 films修向前南京大学教授XIU Xiangqian-Professor of Nanjing university

应用于垂直器件的高电导率GaN单晶衬底制HVPE Growth of Bulk GaN with High Conductivity for Vertical Devices王建峰苏州纳维科技有限公司总经理WANG JianfengGeneral Manager of Suzhou Nanowin Science and Technology Co., Ltd