基于表面电位的-Ga2O3功率MOSFET紧凑模型A Surface Potential Based Compact Model for -Ga2O3 Power MOSFETs周凯中国科学技术大学ZHOU KaiChina University of Science and Technology

Ultrawide Bandgap Ga2O3 Technologies - Benefits of Heterogeneous IntegrationMartin KUBALL英国布里斯托大学新兴技术系主任、教授Martin KUBALLRoyal Academy of Engineering Chair in Emerging Technologies at the University of Bristol, UK

横向和纵向-Ga2O3功率MOSFET的十年进展A Decade of Advances in Lateral and Vertical -Ga2O3 Power MOSFETs黄文海香港科技大学副教授Man Hoi WONGAssociate Professor of The Hong Kong University of Science and Technology

-Ga2O3单晶的体晶生长与性能Bulk crystal growth and properties of?-Ga2O3Single Crystal穆文祥山东大学副教授MU WenxiangAssociate Professor of Shandong University

利用高Al组分-(AlGa)2O3缓冲层在蓝宝石衬底上优化生长高质量-Ga2O3厚膜Growth of high quality - Ga2O3 thick film on sapphire by using high Al content - (AlGa)2O3 buffer layer张赫之大连理工大学副教授ZHANG HezhiAssociate professor of Dalian University of Technology

NiO/Ga2O3异质结二极管中深能级陷阱和载流子输运机制Correlation of deep-level traps and carrier transport mechanisms in NiO/Ga2O3 heterojunction diodes汪正鹏南京大学Zhengpeng WangNanjing University

MgO（100）上生长柱状纳米晶b-Ga2O3外延薄膜及其高灵敏度日盲探测器研究Columnar-nanodomained epitaxial b-Ga2O3 thin films on MgO(100) for solar-blind photodetectors with exceedingly high sensitivity何云斌湖北大学教授HE YunbinProfessor of Hubei University

Ga2O3光电二极管的可控制备及应用Controllable Fabrication and Application of Ga2O3 Photodiodes卢红亮复旦大学微电子学院教授LU HongliangProfessor of Fudan University

新型宽禁带压电半导体材料-Ga2O3及其在射频谐振器中的应用-Ga2O3: an Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators王钢中山大学佛山研究院院长，中山大学半导体照明材料及器件国家地方联合工程实验室主任、教授WANG GangProfessor and Dean of Foshan Institute of Sun Yat-Sen University; Director of the National-Local Joint Engineering Laboratory of Semiconductor

基于HVPE-Ga2O3氮化的GaN衬底技术The preparation of GaN based on the nitridation of HVPE-Ga2O3 films修向前南京大学教授XIU Xiangqian-Professor of Nanjing university

中国科学院微电子研究所研究员龙世兵分享了基于(100) -Ga2O3 单晶的肖特基二极管和MOS电容的研究成果。基于型氧化镓所生产的一些器件在能源使用中发挥着重要的作用。能源使用的安全性是一个重要问题，在自然能源不断减少，价格不断上升的背景下，我们需要找到一个更加有效的方式来利用能源。当前在高电压应用领域，包括高铁和智能电网等，硅仍然是主导材料，但有一定局限性，比如禁带比较窄等。与宽禁带材料相比，有弱势的地方。