电流/功率截止频率为135/310 GHz的高性能硅基InAlN/GaN HEMTsHigh-Performance InAlN/GaN HEMTs on Silicon Substrate with fT/fmax of 135/310 GHz 崔鹏山东大学新一代半导体材料研究院研究员CUIPengResearch Fellow of the Institute of Novel Semiconductor of Shandong University
新型宽禁带压电半导体材料-Ga2O3及其在射频谐振器中的应用-Ga2O3: an Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators王钢中山大学佛山研究院院长，中山大学半导体照明材料及器件国家地方联合工程实验室主任、教授WANG GangProfessor and Dean of Foshan Institute of Sun Yat-Sen University; Director of the National-Local Joint Engineering Laboratory of Semiconductor
高性能GaN-on-GaN材料与器件的外延生长High output power and bandwidth of c-plane GaN-on-GaN micro-LED for high-speed visible light communication王国斌江苏第三代半导体研究院研发部负责人WANG GuobinSenior Project ManagerHead of RD Dept of Jiangsu Institute of Advanced Semiconductors
无损表征氮化镓外延热物性的瞬态热反射技术Transient thermoreflectance technique for non-invasively characterizing the thermal properties of GaN epitaxial wafer袁超武汉大学工业科学研究院研究员YUAN ChaoProfessor of The Institute of Technological Sciences, Wuhan University
新型电力系统与国家双碳战略New Power System and NationalDual-Carbon Strategy汤广福--中国工程院院士、全球能源互联网研究院院长TANG Guangfu--Academician of Chinese Academy of Engineering, President of Global Energy Interconnection Research Institute
