中高压（1-10 kV）氮化镓功率器件新进展New Progress in Medium and High Voltage (1-10 kV) GaN Power Devices张宇昊美国弗吉尼亚理工大学助理教授ZHANG Yuhao Assistant Professor, Virginia Tech University
Si基GaN器件及系统研究与产业前景Research of GaN-on-Si devices and the related systems于洪宇南方科技大学深港微电子学院院长、教授YU HongyuDeanProfessor of School of Microelectronics at Southern University of Science and Technology
4H-SiC MOSFET中界面碳团簇的形成和迁移率退化机理Interfacial Carbon Cluster Formation and Mobility Degradation in 4H-SiC MOSFETs张召富武汉大学工业科学研究院研究员ZHANG ZhaofuProfessor of The Institute of Technological Sciences, Wuhan University
SiC等离子体波脉冲功率器件与应用研究Research on 4H-SiC Plasma Wave Pulsed Power Devices and its Applications孙乐嘉西安电子科技大学副教授SUN LejiaAssociate Professor of Xidian University
电热应力下碳化硅功率MOSFET损伤的多尺度探测表征方法Multi-scale Detection and Characterization of SiC Power MOSFET Damage under Electro-thermal Stress刘斯扬东南大学教授LIU SiyangProfessor of Southeast University
GaN半导体垂直腔面激光器的仿真设计与分析Simulation Design and Analysis of GaN Semiconductor Vertical Cavity Surface Laser张紫辉河北工业大学教授ZHANG ZihuiProfessor of Hebei University of Technology
Ultrawide Bandgap Ga2O3 Technologies - Benefits of Heterogeneous IntegrationMartin KUBALL英国布里斯托大学新兴技术系主任、教授Martin KUBALLRoyal Academy of Engineering Chair in Emerging Technologies at the University of Bristol, UK
横向和纵向-Ga2O3功率MOSFET的十年进展A Decade of Advances in Lateral and Vertical -Ga2O3 Power MOSFETs黄文海香港科技大学副教授Man Hoi WONGAssociate Professor of The Hong Kong University of Science and Technology
利用高Al组分-(AlGa)2O3缓冲层在蓝宝石衬底上优化生长高质量-Ga2O3厚膜Growth of high quality - Ga2O3 thick film on sapphire by using high Al content - (AlGa)2O3 buffer layer张赫之大连理工大学副教授ZHANG HezhiAssociate professor of Dalian University of Technology
MPCVD法金刚石同质外延生长及MOS器件技术Homogeneous epitaxial diamond growth by MPCVD and its MOS device technology张金风西安电子科技大学教授ZHANG JinfengProfessor of Xidian University
NiO/Ga2O3异质结二极管中深能级陷阱和载流子输运机制Correlation of deep-level traps and carrier transport mechanisms in NiO/Ga2O3 heterojunction diodes汪正鹏南京大学Zhengpeng WangNanjing University
