宽带GaN毫米波新器件研究Research on Broadband GaN Millimeter Wave Devices黄伟复旦大学教授HUANG WeiProfessor of Fudan University

比电阻3.3毫欧.平方厘米的1200伏14毫欧SiC MOSFET1200V 14mohm SiC MOSFET with Rsp,on of 3.3mohm.cm^2雷光寅复旦大学副研究员LEI GuangyinAssociate Professor of Fudan University

Ga2O3光电二极管的可控制备及应用Controllable Fabrication and Application of Ga2O3 Photodiodes卢红亮复旦大学微电子学院教授LU HongliangProfessor of Fudan University

基于P区反序掺杂策略的高效碳化硅结势垒肖特基二极管的研究High-Performance 1200 V/ 20 A 4H-SiC JBS Diodes with Retrograde P-Implants Strategy张园览复旦大学Yuan-Lan ZHANGFudan University

SiC器件和模块的最新进展RecentAdvancesofSiCPowerDevices张清纯复旦大学特聘教授、上海碳化硅功率器件工程技术研究中心主任Jon Zhang--Distinguished Professor of Fudan University