GaN半导体垂直腔面激光器的仿真设计与分析Simulation Design and Analysis of GaN Semiconductor Vertical Cavity Surface Laser张紫辉河北工业大学教授ZHANG ZihuiProfessor of Hebei University of Technology

激光雷达用的1550nm磷化铟半导体激光器1550 nm InP semiconductor laser for lidar黄永光河南仕佳光子科技股份有限公司有源产品技术总监,中科院半导体所研究员HUANG YongguangTechnical Director of Henan Shijia Photons Technology Co., Ltd., Professor of Institute of Semiconductors, Chinese Academy of Sciences

基于蓝光半导体激光器的新器件：SWOT分析New devices based on blue laser diodes: SWOT analysis.Mike LESZCZYNSKI波兰高压物理研究所研究员Mike LESZCZYNSKIProfessor of Institute of High Pressure Physics, Poland

超宽禁带半导体氧化镓及金刚石的晶体生长模拟研究Modeling of ultrawide Bandgap Semiconductor crystal growth for Gallium oxide and Diamond付昊苏州思体尔软件科技有限公司副总经理Henry FUVice General Manager of SuZhou STR Software Technology Co., Ltd.

超宽禁带六方氮化硼二维原子晶体及其光电器件Growth of ultra-wide band-gap two-dimensional hexagonal boron nitride for optoelectronic devices张兴旺中国科学院半导体所研究员ZHANG XingwangProfessor of Institute of Semiconductors, Chinese Academy of Sciences

新型宽禁带压电半导体材料-Ga2O3及其在射频谐振器中的应用-Ga2O3: an Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators王钢中山大学佛山研究院院长，中山大学半导体照明材料及器件国家地方联合工程实验室主任、教授WANG GangProfessor and Dean of Foshan Institute of Sun Yat-Sen University; Director of the National-Local Joint Engineering Laboratory of Semiconductor

全球产业链顶级智囊汇聚苏州 共议第三代半导体产业新风向第八届国际第三代半导体论坛暨第十九届中国国际半导体照明论坛在苏州盛大召开2月8日，第八届国际第三代半导体论坛（IFWS）第十九届中国国际半导体照明论坛（SSLCHINA）在苏州盛大开幕。在这场被视为全球第三代半导体行业风向标的盛会上，大会主席、全国政协教科卫体委员会副主任、科技部原副部长曹健林，中国科学院院士、浙江大学教授杨德仁，中国科学院院士、南昌大学副校

宽禁带半导体助推电动汽车进程Wide Bandgap Devices Empower Vehicle Electrification李道会--蔚来汽车功率半导体设计团队负责人、高级总监

用于先进SiC功率模块的整体解决（核心设备/材料/工程）方案Overall solution (core equipment/materials/engineering) for advanced SiC power module周鑫苏州博湃半导体技术有限公司市场销售总监ZHOU XinDirector of Sales Marketing, Suzhou Bopai Semiconductor Technology Co., Ltd.

第三代半导体助力数字能源产业发展The wide bandgap semiconductor boosts the development of digital energy industry于坤山北京世纪金光半导体有限公司副总裁YU KunshanVice President of CENGOL

高性能GaN-on-GaN材料与器件的外延生长High output power and bandwidth of c-plane GaN-on-GaN micro-LED for high-speed visible light communication王国斌江苏第三代半导体研究院研发部负责人WANG GuobinSenior Project ManagerHead of RD Dept of Jiangsu Institute of Advanced Semiconductors

定量阴极发光CL技术在氮化物半导体中的应用Application of Quantitative Cathodoluminescence Technology in Nitride Semiconductors刘兵武北京正通远恒科技有限公司总经理Stephen LiUGeneral Manager of Beijing HONOPROF Sci.Tech. Ltd

新型MO源及在第三代半导体中的应用Novel MO Sources and Their Applications in Wide Bandgap Semiconductors杨敏江苏南大光电材料股份有限公司首席科学家

半导体行业对高纯电子化学品质量管理的高要求High requirements for the quality management of high-purity electronic chemicals in Semiconductor俞冬雷安徽亚格盛电子新材料有限公司副总经理YU DongleiVice General Manager of Anhui Argosun?New Electronic Materials Co., Ltd

平片蓝宝石衬底上高质量AlN材料MOCVD外延生长High quality AlN growth on flat sapphire at relative low temperature by MOCVD赵德刚中国科学院半导体所研究员ZHAO DegangProfesor of Institute of Semiconductors, CAS

促进宽禁带半导体产业化的关键外延技术The key epitaxial technology to promote the industrialization of wide bandgap semiconductors方子文德国爱思强股份有限公司中国区副总经理FANG ZiwenDeputy General Manage，China AIXTRON SE

第三代半导体碳化硅器件产业化关键技术及发展进展The key technology and development progress of the Wide Band-gap semiconductor silicon carbide device industrialization钮应喜芜湖启迪半导体有限公司研发总监NIU YingxiRD Director of Wuhu Advanced Semiconductor Manufacturing Co.,ltd

化合物半导体工艺设备解决方案 Equipment and Processes Solutions in Compound Semiconductor王显刚北京北方华创微电子装备有限公司LED及化合物半导体行业发展部总经理WANGXiangangGeneral Manager ofLED and Compound Semiconductor Developmentdepartment, Beijing NAURA Microelectronics Equipment Co.,ltd.

SiC功率器件制造工艺特点与核心装备创新进展Manufacturing process characteristics and key equipment development of SiC power devices巩小亮中国电子科技集团公司第四十八研究所 半导体装备研究部副主任GONGXiaoliang Deputy director of Semiconductor equipment research department, the 48th Research Institute of China Electronics Technology Group Corporation

Ⅲ族氮化物半导体光电子器件的几个科学问题张荣--厦门大学校长、教授