28GHz氮化镓基时间调制波束成形系统28GHz GaN based time modulated beamforming system黄同德南京理工大学副教授HUANG TongdeAssociate Professor of Nanjing University of Science and Technology

RecentProgressoftheMITVirtual-SourceGaNHEMT(MVSG)CompactModelLan WEI加拿大滑铁卢大学副教授Lan WEIAssociate Professor of University of Waterloo, Canada

SiC等离子体波脉冲功率器件与应用研究Research on 4H-SiC Plasma Wave Pulsed Power Devices and its Applications孙乐嘉西安电子科技大学副教授SUN LejiaAssociate Professor of Xidian University

横向和纵向-Ga2O3功率MOSFET的十年进展A Decade of Advances in Lateral and Vertical -Ga2O3 Power MOSFETs黄文海香港科技大学副教授Man Hoi WONGAssociate Professor of The Hong Kong University of Science and Technology

-Ga2O3单晶的体晶生长与性能Bulk crystal growth and properties of?-Ga2O3Single Crystal穆文祥山东大学副教授MU WenxiangAssociate Professor of Shandong University

金刚石深紫外光电探测器研究Deep ultraviolet photodetectors based on diamond杨珣郑州大学副教授YANG XunProfessor of Zhengzhou University

利用高Al组分-(AlGa)2O3缓冲层在蓝宝石衬底上优化生长高质量-Ga2O3厚膜Growth of high quality - Ga2O3 thick film on sapphire by using high Al content - (AlGa)2O3 buffer layer张赫之大连理工大学副教授ZHANG HezhiAssociate professor of Dalian University of Technology

基于氮化镓的CRM图腾柱PFC整流器的无传感器电流过零检测技术王浩宇上海科技大学信息学院长聘副教授、研究员WANG HaoyuAssociate Professor of ShanghaiTech University

AlGaN基低维量子结构外延和电导率调控研究Study on the epitaxy and conductivity regulation of AlGaN based low dimensional quantum structures许福军北京大学物理学院副教授Xu Fujun - Associate Professor, Peking University

Adding efficiency to electronics with III-Nitride technologySrabanti CHOWDHURY美国斯坦福大学电气工程副教授Srabanti CHOWDHURYAssociate Professor of Electrical Engineering and Senior Fellow at the Precourt Institute for Energy, USA

日本名城大学副教授Motoaki IWAYA 带来了关于基于AlGaN 激光的发展现状的报告。

报告简介单晶4H型碳化硅台阶生长机理 The step growth mechanism for 4H-SiC with Improved Single Polytypes林伟厦门大学副教授 LINWeiAssociate Professor of Xiamen University

西安交通大学副教授李强做了题为射频溅射技术制备h-BN薄膜的制作与应用的主题报告，分享了溅射制备的hBN膜,包括工艺条件的选择，hBN的性质，以及hBN膜的应用，包括电阻开关行为等内容。 报告指出，所制备的hBN膜可以在大面积上获得良好的光滑度。由BN和BAlN薄膜组成的DBR可以在UVA波段实现高反射。首先在Ag / hBN / Al结构中观察到通过溅射制备的hBN膜的RS行为。掺铝氮化硼薄膜的RS窗口明显增加。