双阈值耦合AlGaN/GaN HEMT中用于优化Ka波段高电场线性度的多指漏极板研究Investigation of multi-fingers drain field plate in dual-threshold coupling AlGaN/GaN HEMTs for optimizing linearity at high electrical field in Ka-bands王鹏飞西安电子科技大学Wang PengfeiXidian University
无等离子体损伤GaN HEMT极化隔离的设计与优化Design and optimization of polarization isolation toward plasma-damage-free GaN HEMT戴贻钧中国科学院宁波材料技术与工程研究所DAI YiyunNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences
利用高Al组分-(AlGa)2O3缓冲层在蓝宝石衬底上优化生长高质量-Ga2O3厚膜Growth of high quality - Ga2O3 thick film on sapphire by using high Al content - (AlGa)2O3 buffer layer张赫之大连理工大学副教授ZHANG HezhiAssociate professor of Dalian University of Technology
