电子科技大学博士陈匡黎： p-GaN Gate HEMT器件阈值稳定性及其机理

p-GaN Gate HEMT器件阈值稳定性及其机理Study of the Physics of Vth Instability of p-GaN Gate HEMT陈匡黎电子科技大学博士ZHOU QiProfessor of University of Electronic Science and Technology of China