电流/功率截止频率为135/310 GHz的高性能硅基InAlN/GaN HEMTs

High-Performance InAlN/GaN HEMTs on Silicon Substrate with fT/fmax of 135/310 GHz

崔鹏——山东大学新一代半导体材料研究院研究员

CUI Peng——Research Fellow of the Institute of Novel Semiconductor of Shandong University