功率HEMT的p-GaN栅极可靠性及其加固方法

GaN Gate Reliability and Its Reinforcement Techniques in Power HEMTs

钟耀宗——中国科学院苏州纳米技术与纳米仿生研究所助理研究员

ZHONG Yaozong——Assistant Professor of Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences