4H-SiC MOSFET中界面碳团簇的形成和迁移率退化机理

Interfacial Carbon Cluster Formation and Mobility Degradation in 4H-SiC MOSFETs

张召富——武汉大学工业科学研究院研究员

ZHANG Zhaofu——Professor of The Institute of Technological Sciences, Wuhan University