Physical Modeling of Charge Trapping Effects in SiC MOSFETs
Tibor GRASSER——奥地利维也纳工业大学微电子研究所所长、教授
Tibor GRASSER——Professor and Head of the Institute for Microelectronics at Technische Universit?t Wien, Austria
Physical Modeling of Charge Trapping Effects in SiC MOSFETs
Tibor GRASSER——奥地利维也纳工业大学微电子研究所所长、教授
Tibor GRASSER——Professor and Head of the Institute for Microelectronics at Technische Universit?t Wien, Austria